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Bulunduğunuz yer listede yoksa, lütfen aşağıdakilerden birini seçin:

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  1. Ev
  2. Ürünler
  3. DRAM
  4. DDR3
  5. K4B4G0846E-BMMA

Samsung Semiconductor - K4B4G0846E-BMMA

KEY Part #: K7359680

[26040adet Stok]

    Parça numarası:
    K4B4G0846E-BMMA
    Üretici firma:
    Samsung Semiconductor
    Detaylı Açıklama:
    4 Gb 512M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production.
    Üreticinin standart teslim süresi:
    Stokta var
    Raf ömrü:
    Bir yıl
    Gönderen Çip:
    Hong Kong
    RoHS:
    Ödeme şekli:
    Sevkiyat yolu:
    Aile Kategorileri:
    KEY Components Co, LTD dahil olmak üzere ürün kategorileri sunan bir Elektronik Bileşenler Dağıtıcısı: DDR4, LPDDR3, SLC Nand, LPDDR4X, HBM Flarebolt, LPDDR4, DDR3 and LPDDR5 ...
    Rekabet avantajı:
    We specialize in Samsung Semiconductor K4B4G0846E-BMMA electronic components. K4B4G0846E-BMMA can be shipped within 24 hours after order. If you have any demands for K4B4G0846E-BMMA, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B4G0846E-BMMA Ürün özellikleri

    Parça numarası : K4B4G0846E-BMMA
    Üretici firma : Samsung Semiconductor
    Açıklama : 4 Gb 512M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production
    Dizi : DDR3
    Yoğunluk : 4 Gb
    Org. : 512M x 8
    hız : 1600 Mbps
    Voltaj : 1.35 V
    Sıcaklık. : -40 ~ 95 °C
    paket : 78FBGA
    ürün durumu : Mass Production

    Son Haberler

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    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    SSDs, DRAM and gaming: Unlocking a new level of performance
    The future of NAND technology
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    [Video] 5G memory solutions : 5G. All in the Memory.
    Unlocking the Power of Cloud Computing
    Samsung Rolls Out Industry’s First 8GB LPDDR4 DRAM Package
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    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
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